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| No.13758645

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Information Name: | IRFU120NPBF IR N-type field effect transistor original spot |
Published: | 2015-06-23 |
Validity: | 180 |
Specifications: | |
Quantity: | 4000.00 |
Price Description: | |
Detailed Product Description: | Delay Time 4.5 ns typical gate chargeVgs 25 nC V @ 10 typical input capacitance value of a typical turn-off delay time of 32 ns Typical TurnVds 330 pF V @ 25 Mounting Type Through Hole IPAK width 2.3mm Package Type Dimensions 6.6 x 2.3 x 6.1mm Pin Count 3 Minimum Operating Temperature -55 ° C Maximum Power Dissipation 48 W maximum gate-source voltage of ± 20 V maximum drain-source Voltage 100 V maximum drain-source resistance of 0.21 Ω Maximum Continuous Drain Current 9.4 A maximum operating temperature +175 ° C the number of components per chip 1 Category Power MOSFET Channel Type N-channel enhancement mode to configure a single length of 6.6mm height 6.1mm |
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Copyright © GuangDong ICP No. 10089450, Shenzhen-Chang Technology Co., Ltd. All rights reserved.
Technical support: ShenZhen AllWays Technology Development Co., Ltd.
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You are the 13852 visitor
Copyright © GuangDong ICP No. 10089450, Shenzhen-Chang Technology Co., Ltd. All rights reserved.
Technical support: ShenZhen AllWays Technology Development Co., Ltd.
AllSources Network's Disclaimer: The legitimacy of the enterprise information does not undertake any guarantee responsibility