Product Details N-channel power MOSFET 13A to 19A, International Rectifier International Rectifier Discrete HEXFET? Power MOSFET series includes surface mount and leaded package of N-channel devices, the shape can cope with almost any board layout and thermal design challenges. Over the entire range, the benchmark on-resistance reduces conduction losses, allowing designers to provide optimal system efficiency. MOSFET transistor, International Rectifier International Rectifier's extensive rugged single and dual N-channel and P-channel devices offer fast switching speed combination, can meet a variety of power requirements, the application range: from AC - DC and DC - DC power to audio and consumer electronics products, and from motor control to lighting and appliances. Typical turn-off delay time of 19 ns typical turn-on delay time of 4.9 ns typical gate chargeVgs 20 nC V @ 10 typical input capacitance valueVds 370 pF V @ 25 Mounting Type Through Hole Package Type TO-220AB Pin Count 3 Minimum Operating temperature -55 ° C Maximum Power Dissipation 45 W maximum gate-source voltage of ± 20 V maximum drain-source voltage of 55 V maximum drain-source resistance of 0.07 Ω Maximum Continuous Drain Current 17 A maximum operating temperature of +175 ° C per chip components Number 1 Category Power MOSFET Channel Type N-channel enhancement mode to configure a single height 8.77mm